Mosfet device with shielding region and manufacturing method thereof

ABSTRACT

A MOSFET device comprising: a structural region, made of a semiconductor material having a first type of conductivity, which extends between a first side and a second side opposite to the first side along an axis; a body region, having a second type of conductivity opposite to the first type, which extends in the structural region starting from the first side; a source region, having the first type of conductivity, which extends in the body region starting from the first side; a gate region, which extends in the structural region starting from the first side, traversing entirely the body region; and a shielding region, having the second type of conductivity, which extends in the structural region between the gate region and the second side. The shielding region is an implanted region self-aligned, in top view, to the gate region.

BACKGROUND Technical Field

The present disclosure relates to a silicon carbide MOSFET device and to a manufacturing method thereof. In particular, the present disclosure relates to a MOSFET device with low on-state resistance and high reliability.

Description of the Related Art

Known to the art are MOSFETs (Metal-Oxide-Semiconductor Field-Effect Transistors) made of silicon carbide (SiC) for power-electronics applications. In particular, the silicon carbide MOSFETs present advantages over power MOSFETs of a conventional type, thanks to their characteristics of reduction of the energy losses and to their small dimensions.

An aim in the design of a silicon carbide MOSFET regards protection of the gate-dielectric regions in reverse-biasing conditions during use of the transistor, i.e., when the aforesaid regions are subject to high electrical fields. A better protection of the gate-dielectric regions enables proper operation of said transistors also at higher operating voltages, without jeopardizing reliability thereof.

In particular, silicon carbide MOSFETs may be made in such a way that they have a planar structure or a trench-gate structure. Planar-structure transistors typically have a lower channel mobility than trench-gate transistors.

An example of trench silicon carbide MOSFET of a known type (referred to hereinafter for simplicity as “device 1”) is provided in FIG. 1, where it is represented in lateral sectional view in a system of spatial co-ordinates defined by mutually orthogonal axes X, Y, and Z.

The device 1 comprises a semiconductor body 2 made of silicon carbide.

In particular, the semiconductor body 2 comprises a substrate 4 and a structural region 6. The substrate 4 is made of silicon carbide having a conductivity of a first type (here, an N type) and a first doping concentration. The substrate 4 is delimited by a first side 4 a and a second side 4 b opposite to one another in the direction Z.

The structural region 6 is likewise made of silicon carbide, having a conductivity of the first type (N) and a second doping concentration lower than the first doping concentration. The structural region 6 extends over the substrate 4 and is delimited by a first side 6 a and a second side 6 b, which is opposite to the first side 6 a in the direction Z and is in contact with the substrate 4 on its first side.

A body region 8, having a conductivity of a second type (here a P type), different from the first type, extends within the structural region 6, with main direction of extension substantially parallel to the plane XY.

A source region 10, having a conductivity of the first type (N), extends on the body region 8, with main direction of extension parallel to the plane XY. In particular, a first side of the source region 10 is in contact with the body region 8, whereas a second side of the source region 10, opposite to the first side in the direction Z, coincides with the first side 6 a of the structural region 6.

A first gate region 12 a extends in depth within the structural region 6, starting from its first side 6 a. In particular, the first gate region 12 a traverses entirely the source region 10 and the body region 8, and extends in depth beyond the body region 8.

A second gate region 12 b, equivalent from a structural and functional standpoint to the first gate region 12 a, extends in depth within the structural region 6, starting from its first side 6 a, at a distance from the first gate region 12 a. As has been said for the first gate region 12 a, the second gate region 12 b traverses entirely the source region 10 and the body region 8 and extends in depth beyond the body region 8.

The first and second gate regions 12 a, 12 b, comprise, respectively, a first gate electrode 12 a′ and a second gate electrode 12 b′, made of conductive material. Moreover, the first and second gate regions 12 a, 12 b comprise, respectively, a first gate dielectric 12 a″ and a second gate dielectric 12 b″, made of insulating material.

In particular, the first and second gate dielectrics 12 a″, 12 b″ coat the first and second gate electrodes 12 a′, 12 b′ in such a way that the first and second gate electrodes 12 a′, 12 b′ are not in direct contact with the source region 10, the body region 8, and the structural region 6.

During use of the device 1, in a known way, conductive channels are formed at the interface between the body region 8 and, respectively, the first and second gate dielectrics 12 a″, 12 b″.

A shielding region 14, having a conductivity of the second type (P), extends within the structural region 6, at a distance from the first and second gate regions 12 a, 12 b, on a respective side of the latter. More in particular, the shielding region 14 does not extend between the first and second gate regions 12 a, 12 b. The shielding region 14 extends in depth starting from the first side 6 a of the structural region 6, reaching a depth greater than that of the body region 8.

The device 1 further comprises an intermediate dielectric region 18, which extends, at the first side 6 a of the structural region 6, over the source region 10, the first and second gate regions 12 a, 12 b, and the shielding region 14. In particular, the intermediate dielectric region 18 covers the first and second gate regions 12 a, 12 b entirely.

The device 1 further comprises a source electrode 20, which extends over the intermediate dielectric region 18 and within openings in the intermediate dielectric region 18, at regions of the first side 6 a of the structural region 6 not covered by the intermediate dielectric region 18.

The device 1 further comprises a drain electrode 22, which extends underneath the semiconductor body 2.

A contact region 16, having a conductivity of the first type (N+) and a third doping concentration higher than the second doping concentration, extends between, and at a distance from, the first and second gate regions 12 a, 12 b, in depth in the structural region 6 starting from the first side 6 a. In particular, the depth, along Z, at which the contact region 16 extends corresponds to the depth at which the source region 10 extends.

A central implantation region 24, having a conductivity of the second type (P), extends between the first and second gate regions 12 a, 12 b, and at a distance from the latter, within the structural region 6 and immediately underneath the contact region 16 and the source region 10. In particular, the central implantation region 24 extends in depth in the structural region 6, beyond the depth, measured along the axis Z, reached by the body region 10.

In particular, the central implantation region 24 extends at a first distance TTP_(L) from the first gate region 12 a, and at a second distance TTP_(R) from the second gate region 12 b, the first and second distances TTP_(L), TTP_(R) being the minimum distances between the central implantation region 24 and the first and second gate regions 12 a, 12 b measured in the direction X.

Likewise, also the shielding regions 14 extend at respective minimum distances TTP_(L′) and TTP_(R)′ from the respective first and second gate regions 12 a, 12 b that they face directly.

As is known, the shielding region 14 and the central implantation region 24 are designed so as to reduce, given the same reverse-biasing voltage applied, the electrical field at the first and second gate dielectrics 12 a″, 12 b″. In effect, an aim in design of the device 1 consists in guaranteeing that the first and second gate dielectrics 12 a″, 12 b″ will be able to withstand the electrical fields in any operating condition.

For this purpose, there is known the possibility of increasing the thickness of the first and second gate dielectrics 12 a″, 12 b″. However, this design solution entails an undesirable increase in the extension in the plane XY of the area of the first and second gate regions 12 a, 12 b, thus limiting the efficiency of the device 1 and increasing the area occupied thereby.

It is moreover known that the efficiency of the central implantation region 24 in limiting the electrical field at the first and second gate dielectrics 12 a″, 12 b″ depends, respectively, upon the values of the first and second distances TTP_(L), TTP_(R), as well as upon the values of the distances TTP_(L)′ and TTP_(R)′. In particular, it is known that the distances TTP_(L), TTP_(R), TTP_(L)′, and TTP_(R)′ should preferably be comprised in a range around an ideal value. However, a possible drawback of this solution applied to the device 1 is caused by the methods typically used for manufacturing the device 1. In particular, it is common to produce the first and second gate regions 12 a, 12 b using a first photolithographic mask, whereas the central implantation region 24 and the shielding regions 14 are obtained using one and the same second photolithographic mask, or successive second photolithographic masks. Consequently, any inevitable imprecision of alignment between the first and the one or more second photolithographic masks mean that the distances TTP_(L), TTP_(R), TTP_(L)′, and TTP_(R)′ are, in effect, all different from one another, thus unbalancing the electrical behavior of the device 1. In particular, the resulting asymmetry means that one of the first and second gate dielectrics 12 a″, 12 b″ is subjected to a stronger electrical field given the same operating voltage, hence causing a lower breakdown voltage for the device 1. Added to this is a degradation of the gate oxide, which jeopardizes the reliability during the service life of the device 1.

BRIEF SUMMARY

One or more embodiments of the present disclosure provide a silicon carbide MOSFET device with low on-state resistance and high reliability, and a manufacturing method thereof, alternative to those of a known type. Such one or more embodiments provide a MOSFET device and a method for manufacturing the MOSFET device that will be able to overcome or reduce the drawbacks of the prior art mentioned previously.

According to the present disclosure a MOSFET device and a method for manufacturing the MOSFET device are provided.

BRIEF DESCRIPTION OF THE SEVERAL VIEWS OF THE DRAWINGS

For an understanding of the present disclosure, preferred embodiments thereof are now described, purely by way of non-limiting example, with reference to the attached drawings, wherein:

FIG. 1 is a schematic lateral sectional view of a MOSFET device of a known type;

FIG. 2 is a schematic lateral sectional view of a MOSFET device according to an embodiment of the present disclosure;

FIGS. 3A-3F are schematic lateral sectional views of respective manufacturing steps of a MOSFET device according to an embodiment of the present disclosure; and

FIG. 4 illustrates an elementary cell of the MOSFET device of FIG. 2.

DETAILED DESCRIPTION

FIG. 2 is a schematic illustration of a trench-gate MOSFET 31 according to an embodiment of the present disclosure. For simplicity, in the rest of the description, it will be referred to as “MOSFET device 31”. The MOSFET device 31 is illustrated in lateral sectional view in a system of spatial co-ordinates defined by mutually orthogonal axes X, Y, and Z.

The MOSFET device 31 comprises a semiconductor body 32 made of silicon carbide. The semiconductor body 32 comprises a substrate 34 and a structural body 36. The substrate 34 is made of a semiconductor material, for example silicon carbide SiC, having a conductivity of a first type (here, an N type) and a first doping concentration, for example, higher than 10¹⁸ atoms/cm³. The substrate 34 is delimited by a first side 34 a and a second side 34 b opposite to one another in the direction Z.

The structural body 36 likewise may be made of silicon carbide, extends over the substrate 34, and is delimited by a first side 36 a and by a second side 36 b, which is opposite to the first side 36 a in the direction Z. In particular, the second side 36 b of the structural body 36 coincides with the first side 34 a of the substrate 34. The structural body 36 has a thickness, measured in the direction Z, comprised, for example between 1 μm and 100 μm, for example 10 μm, for withstanding, in use, voltages of between 100 V and 20 kV.

A body region 38, having a conductivity of a second type (here a P type), different from the first type, extends within the structural body 36 starting from its first side 36 a and in depth along Z. In particular, the body region 38 has a doping concentration comprised, for example, between 10¹⁵ atoms/cm³ and 10¹⁸ atoms/cm³, for example 10¹⁷ atoms/cm³, for withstanding, in use, voltages of between 100 V and 20 kV.

A source region 40, having a conductivity of the first type (N), extends within the body region 38 starting from the first side 36 a of the structural body 36. In particular, the source region 40 has a doping concentration comprised, for example, between 10¹⁸ atoms/cm³ and 10²¹ atoms/cm³, for example 10²⁰ atoms/cm³.

In particular, the source region 40 extends within the structural body 36 down to a maximum depth comprised, for example, between 0.1 μm and 0.5 μm, for example 0.3 μm, where said depth is considered in the direction Z starting from the first side 36 a of the structural body 36. The body region 38 extends within the structural body 36 down to a depth comprised, for example, between 0.3 μm and 1 μm, for example 0.6 μm, considered in the direction Z starting from the first side 36 a of the structural body 36.

The portions of the structural body 36 not occupied by the body region 38 and the source region 40 have a conductivity of the first type (N) and a second doping concentration lower than the first doping concentration, for example of between 10¹⁴ atoms/cm³ and 10¹⁷ atoms/cm³, for example 10¹⁶ atoms/cm³. In practice, the concentration of dopant species of the structural body 36 may be chosen in such a way as to bestow on the latter a resistivity of between 6.25 Ω·cm and 0.125 Ω·cm.

A first gate region 42 a extends in depth within the structural body 36, starting from its first side 36 a. In particular, the first gate region 42 a traverses entirely the source region 40 and the body region 38, and extends beyond the body region 38 down to a depth comprised, for example, between 0.4 μm and 10 μm, for example 1.5 μm, terminating within the structural body 36.

A second gate region 42 b, structurally and functionally similar to the first gate region 42 a, extends in depth within the structural body 36, starting from its first side 36 a in a main direction substantially parallel to the axis Z. The first and second gate regions 42 a, 42 b are at a distance from one another. As has been said for the first gate region 42 a, the second gate region 42 b traverses entirely the source region 40 and the body region 38, and extends beyond the body region 38 reaching the same depth as the first gate region 42 a, and terminating within the structural body 36.

In particular, the first and second gate regions 42 a, 42 b are at a distance dG from one another comprised, for example, between 1 μm and 5 μm, for example 2 μm. This distance d_(G) is the minimum distance, measured in the direction X, between the first and second gate regions 42 a, 42 b.

The first and second gate regions 42 a, 42 b comprise, respectively, a first gate electrode 42 a′ and a second gate electrode 42 b′, made of conductive material such as doped polysilicon, and a respective first gate dielectric 42 a″ and second gate dielectric 42 b″, made of insulating material such as silicon dioxide (SiO₂).

In particular, the first and second gate dielectrics 42 a″, 42 b″ surround or coat, respectively, the first and second gate electrodes 42 a′, 42 b′ in such a way that the first and second gate electrodes 42 a′, 42 b′ are not in direct contact with the source region 40, the body region 38, and the structural body 36. In other words, the first and second gate dielectrics 42 a″, 42 b″ electrically insulate the first and second gate electrodes 42 a′, 42 b′ from the source region 40, from the body region 38, and from the structural body 36.

By way of example, the first and second gate dielectrics 42 a″, 42 b″ have a thickness comprised, for example, between 10 nm and 150 nm, for example, 50 nm.

In a way in itself known, during use of the device 31 conductive channels are formed at the interface between the body region 38 and, respectively, the first and second gate dielectrics 42 a″, 42 b″.

According to one aspect of the present disclosure, a first shielding region 44 a and a second shielding region 44 b, having a conductivity of the second type (P+), extend underneath the first and second gate regions 42 a, 42 b, respectively, in contact with the first and second gate dielectrics 42 a″, 42 b″, respectively, at the bottom of the respective gate region 42 a, 42 b.

In particular, the first and second shielding regions 44 a, 44 b extend within the structural body 36, without reaching the substrate 34. In particular, the first and second shielding regions 44 a, 44 b extend down to a depth d_(well) comprised, for example, between 0.1 μm and 0.3 μm, for example 0.2 μm, where said depth is measured in the direction Z starting from the interface with the bottom of the respective gate region 42 a, 42 b.

The first and second shielding regions 44 a, 44 b have a doping concentration comprised between 10¹⁷ atoms/cm³ and 10²¹ atoms/cm³, for example 10²⁰ atoms/cm³. According to one aspect of the present disclosure, the concentration of dopant species of the first and second shielding regions 44 a, 44 b is chosen so as to bestow thereon a resistivity of between 2.5·10⁻¹ Ω·cm and 6.5·10⁻³ Ω·cm.

According to one aspect of the present disclosure, the first and second shielding regions 44 a, 44 b are aligned, in the direction Z, with the first and second gate regions 42 a, 42 b, respectively. In particular, in a top plan view in the plane XY (not illustrated in the figures), the first shielding region 44 a extends over an area equal to or greater than the area of extension of the first gate electrode 42 a′, but smaller than the area of extension of the first gate dielectric 42 a″. This may also apply to the alignment between the second gate region 42 b and the second shielding region 44 b. In other words, the first and second shielding regions 44 b extend exclusively underneath the first and second gate regions 42 a, 42 b, respectively.

According to one aspect of the present disclosure, the presence of the first and second shielding regions 44 a, 44 b enables reduction of the electrical field, during use of the MOSFET device 31, in the proximity of the first and second gate dielectrics 42 a″, 42 b″, thus improving the reliability of the MOSFET device 31.

Moreover, thanks to the alignment between the first and second gate regions 42 a, 42 b and the respective first and second shielding regions 44 a, 44 b, and in particular thanks to the fact that the first and second shielding regions 44 a, 44 b do not project outside the respective first and second gate regions 42 a, 42 b, the first and second shielding regions 44 a, 44 b do not interfere with the conductive channels, and consequently the on-state resistance of the MOSFET device 31 is not inconveniently increased.

The MOSFET device 31 further comprises an intermediate dielectric region 48, which extends, at the first side 36 a of the structural body 36, over the source region 40 and over the first and second gate regions 42 a, 42 b. In particular, the intermediate dielectric region 48 covers entirely the first and second gate regions 42 a, 42 b. In particular, the intermediate dielectric region 48 is made of insulating material, such as TEOS, and has a thickness comprised, for example, between 0.2 μm and 2 μm, for example 0.5 μm.

Contact regions (trenches) 46 extend alongside each intermediate dielectric region 48, completely through the source region 40 and partially through the body region 38, terminating within the latter. In one embodiment, the trenches 46 have an extension, in top view in the plane XY, that is continuous along the axis Y.

In a different embodiment (not illustrated), each trench 46 has an extension, in top view in the plane XY, of a discontinuous type, including trench sub-portions aligned along the axis Y and alternating with full regions. This embodiment presents the advantage of maximizing the area of contact with the source region 40. In a further embodiment (not illustrated either), the MOSFET device 31 does not have trenches 46. In this case, the electrical contact with the body region 38 occurs by means of implanted regions, having the second type of conductivity (P), which extend through the source regions 40 until they reach and contact the underlying body regions 38. The shape and extension of said implanted regions substantially replicates the shape and extension described for the trenches 46 in the context of the present disclosure (for example, they have an extension, in top view in the plane XY, of a discontinuous type, including implanted sub-portions aligned along the axis Y alternating with regions in which the implant is absent).

The MOSFET device 31 further comprises a source electrode 50, made of conductive material, which extends over the intermediate dielectric region 48 and within the contact regions 46. The source electrode 50 is hence in electrical contact with the source regions 40 and with the body regions 38. Each contact region 46 extends at a distance from the first and second gate regions 42 a, 42 b in such a way that the source electrode 50 is in direct electrical contact with the source region 40 and the body region 38, but is not in direct electrical contact with the first and second gate regions 42 a, 42 b. In particular, the contact region 46 extends in a central position between the first and second gate regions 42 a, 42 b, and outside the area between the first and second gate regions 42 a, 42 b. In other words, the contact region 46 extends outside each gate region 42 a, 42 b, giving out on opposite sides in the direction X of each gate region 42 a, 42 b.

In particular, the extension of the first and second gate regions 42 a, 42 b and of the source electrode 50 through the source region 40 means that the source region 40 comprises a plurality of subregions, amongst which: a first source subregion between the source electrode 50 and a first side of the first gate dielectric 42 a″; a second source subregion between the source electrode 50 and a second side of the first gate dielectric 42 a″, opposite to the first side in the direction X; a third source subregion between the source electrode 50 and a first side of the second gate dielectric 42 b″; a fourth source subregion between the source electrode 50 and a second side of the second gate dielectric 42 b″, opposite to the first side in the direction X. In other words, each gate region 42 a, 42 b is interposed between two source subregions.

The MOSFET device 31 further comprises a drain electrode 52, made of conductive material, which extends on the back of the semiconductor body 32, i.e., on the second side 34 b of the substrate 34.

The steps for manufacturing the MOSFET device according to the present disclosure are described in what follows with reference to FIGS. 3A-3F. FIGS. 3A-3F illustrate, in lateral sectional view in the plane XZ, the MOSFET device in the system of spatial co-ordinates X, Y, and Z of FIG. 2.

FIG. 3A illustrates a portion of a wafer 61 comprising a substrate 64, in particular made of silicon carbide having a conductivity of a first type (here, an N type) and a first doping concentration, for example higher than 10¹⁸ atoms/cm³. The substrate 64 is delimited by a first side 64 a and by a second side 64 b opposite to one another in the direction Z.

On top of the substrate 64 a structural layer 66 is formed, for example, by of epitaxial growth of silicon carbide on the first side 64 a of the substrate 64. The epitaxial growth is carried out according to known techniques and in such a way that the structural layer 66 has the first type of conductivity (N) and a second doping concentration lower than the first doping concentration, comprised, for example, between 10¹⁴ atoms/cm³ and 10¹⁷ atoms/cm³, for example 10¹⁶ atoms/cm³. Moreover, the epitaxial growth is carried out until a thickness of the structural layer 66 comprised, for example, between 1 μm and 100 μm, for example 10 μm is reached. The structural layer 66 is delimited by a first side 66 a and a second side 66 b, opposite to one another in the direction Z; in particular, the second side 66 b coincides with the first side 64 a of the substrate 64.

Then, using implantation techniques in a way in itself known, a body layer is formed 68 having a conductivity of a second type (here a P type), in particular by means of implantation of dopant ion species of a P type, for example aluminum, on the first side 66 a of the structural layer 66. In particular, the implantation dose is, by way of example, of between 10¹² and 10¹³ atoms/cm³ and the implantation energies are comprised, by way of example, between 150 keV and 700 keV, so as to reach a depth, measured in the direction Z starting from the first side 66 a of the structural layer 66, of between, for example, 0.1 μm and 1 μm, for example 0.6 μm.

Then, using implantation techniques of a type in itself known, a source layer is formed 70 having a conductivity of the first type (here, an N type), in particular by means of implantation of dopant ion species of an N type, such as nitrogen or phosphorous, on the first side 66 a of the structural layer 66. In particular, the implantation dose is by way of example of between 10¹³ and 10¹⁵ atoms/cm³ and the implantation energies are comprised, by way of example, between 50 keV and 300 keV, so as to reach a depth less than the depth reached by the body layer 68 and comprised, for example, between 0.1 μm and 0.5 μm, for example 0.3 μm.

As an alternative to what has been described, the body layer 68 and the source layer 70 may be formed by means of subsequent epitaxial growths of material (here, SiC) appropriately doped.

This is followed (FIG. 3B) by a step of selective etching of the structural layer 66 by means of photolithographic and etching techniques of a type in itself known, using a mask 72 formed on the first side 66 a of the structural layer 66. In particular, the mask 72 is made of insulating material such as TEOS or silicon nitride (Si₃N₄), and has openings 72 a in the areas in which the first and second gate regions 42 a, 42 b of the MOSFET device 31 of FIG. 2 are to be formed, in subsequent processing steps.

The step of etching through the mask 72, illustrated in FIG. 3B, forms a plurality of trenches in the structural layer 66 at the openings 72 a of the mask 72. In particular, the etching step forms a first trench 74 a and a second trench 74 b. In particular, the etching step proceeds for a time necessary for the first and second trenches 74 a, 74 b to pass completely through the source layer 70 and the body layer 68. In particular, the depth, along Z, of the first and second trenches 74 a, 74 b is comprised, for example, between 0.4 μm and 10 μm, for example 1.5 μm. The trenches 74 a, 74 b have a width, measured along the axis X, comprised, for example, between 0.5 μm and 1 μm, for example 0.6 μm. The extension along the axis Y of the trenches 74 a, 74 b is equal to the extension of the active area.

This is followed (FIG. 3C) by formation of a spacer layer 76 made of insulating material, such as TEOS or Si₃N₄, on top of the mask 72 and within the first and second trenches 74 a, 74 b, filling them partially. In particular, the spacer layer 76 is formed by growth or deposition in a conformable way within the first and second trenches 74 a, 74 b and extends both on the bottom of the trenches and on the side walls. Even more in particular, subsequent to the step of formation of the spacer layer 76, the structural layer 66 is completely covered.

This is followed by a step of etching of the spacer layer 76, in a selective way with respect to the structural layer 66, in order to expose the structural layer 66 at the bottom of the first and second trenches 74 a, 74 b. According to one aspect of the present disclosure, said etching step is carried out in such a way that, at the end thereof, the spacer layer 76 continues to cover the side walls of the first and second trenches 74 a, 74 b completely, but not the bottom of the first and second trenches 74 a, 74 b. In particular, the steps of formation and non-masked etching of the spacer layer 76 are designed according to known techniques in such a way that at the end of the etching step, the thickness of the spacer layer 76 at the side walls of the first and second trenches 74 a, 74 b is comprised, for example, between 50 nm and 300 nm, for example 100 nm, where said thickness is measured in the direction X. By way of example, said etching step is of an anisotropic dry type (e.g., RIE), preferably acting in the direction Z, in such a way that the rate of removal of the spacer layer 76 at the bottom of the trenches 74 a, 74 b is higher than the rate of removal of the spacer layer 76 at the side walls of the trenches 74 a, 74 b.

This is followed (FIG. 3D) by a step of formation of the shielding regions 44 a, 44 b of FIG. 2. For this purpose, an ion implantation of dopant impurities, for example aluminum, is carried out in order to form a first implanted region 78 a and a second implanted region 78 a 78 b having a conductivity of the second type (P+) on the bottom of the first and second trenches 74 a, 74 b, respectively. In particular, during the implantation step, the mask 72 and the spacer layer 76 function as implantation mask, preventing penetration of dopant impurities within the structural layer 66 except for the region at the bottom of the first and second trenches 74 a, 74 b.

In particular, the implantation dose is, by way of example, of between 10¹³ and 10¹⁵ atoms/cm³ and the implantation energies are comprised, by way of example, between 10 keV and 80 keV.

A subsequent step of thermal diffusion completes formation of the shielding regions 44 a, 44 b.

In particular, the implantation step is designed in such a way that the first and second shielding regions 78 a, 78 b extend for a depth dwell of between 100 nm and 300 nm, for example 200 nm, where the depth is measured in the direction Z starting from the bottom of the first and second trenches 74 a, 74 b.

According to one aspect of the present disclosure, the presence of the spacer layer 76 on the side walls of the first and second trenches 74 a, 74 b means that, at the end of the implantation step, the first and second shielding regions 78 a, 78 b do not extend, in top plan view in the plane XY, outside the area in which the first and second trenches 74 a, 74 b had previously been formed.

The first and second shielding regions 44 a, 44 b of the MOSFET device 31 of FIG. 2 are thus formed.

This is followed (FIG. 3E) by a step of wet etching of the mask 72 and of the spacer layer 76, selectively with respect to the structural layer 66, in order to remove completely the mask 72 and the spacer layer 76 both on top of the structural layer 66 and within the first and second trenches 74 a, 74 b.

Next, the first and second trenches 74 a, 74 b are filled with a gate-dielectric layer and a gate-metallization layer, in a way in itself evident to the person skilled in the art.

In particular, the gate-dielectric layer, made of insulating material, such as SiO₂, Al₂O₃, HfO₂, is deposited on the structural layer 66, on its first side 66, and inside the first and second trenches 74 a, 74 b.

In particular, the gate-dielectric layer is formed by growth or deposition in a conformable way within the first and second trenches 74 a, 74 b and extends both on the bottom of the trenches and on the side walls. In other words, subsequent to the step of formation of the gate-dielectric layer, the structural layer 66 is completely covered.

In particular, the gate-dielectric layer has a thickness comprised, for example, between 10 nm and 200 nm, for example 50 nm, so as to fill the first and second trenches 74 a, 74 b only partially.

Then, the gate-metallization layer is deposited so as to fill the first and second trenches 74 a, 74 b and is subsequently patterned by means of an etching step to form respective gate electrodes 82 a, 82 b. The first and second gate electrodes 42 a′, 42 b′ are thus formed, and consequently the first and second gate regions 42 a, 42 b of the MOSFET device 31 of FIG. 2, designated, respectively, by the reference numbers 84 a, 84 b in FIG. 3E.

Next (FIG. 3F), an intermediate dielectric layer 86 is formed on the first side 66 a of the structural layer 66, on top of the source layer 70. In particular, the intermediate dielectric layer 86 covers the first and second gate regions 84 a, 84 b entirely. In particular, the intermediate dielectric layer 86 is made of insulating material, such as TEOS, and has a thickness comprised, for example, between 0.2 μm and 2 μm, for example 0.5 μm.

Then, an etching step is carried out aimed at forming a plurality of trenches 88 in the structural layer 66 on its first side 66 a. In particular, the trenches 88 extend on opposite sides in the direction X of each between the first and second gate regions 84 a, 84 b. In particular, the etching step starts with an etch of the intermediate dielectric layer 86, and then extends throughout the thickness of the source layer 70 and partially into the body layer 68. In other words, the trenches 88 extend at a distance from the first and second gate regions 84 a, 84 b, in regions where it is intended to form the contact regions 46 of the MOSFET device 31 of FIG. 2. The intermediate dielectric region 48 and the source subregions of the source region 40 of the MOSFET device 31 of FIG. 2 are thus formed.

Next, in a way not illustrated in FIG. 3F, a source metallization is formed by depositing conductive material on the wafer 61 in such a way that it fills the trenches 88 completely and extends over the intermediate dielectric layer 86.

Finally, in a way not illustrated in FIG. 3F, a drain metallization is formed by depositing conductive material on the opposite side of the wafer 61, in contact with the substrate 64.

In this way, the MOSFET device 31 of FIG. 2 is formed.

From an examination of the characteristics of the present disclosure, the advantages that it affords are evident.

In particular, the presence of the shielding regions at the bottom of the trench-gate regions means that the gate dielectrics are subject to electrical fields of lower intensity. Consequently, the MOSFET device can operate at higher voltages without being damaged. The reliability of the MOSFET device is thus improved.

Moreover, the fact that the manufacturing method is based upon a self-alignment of each gate region to the respective shielding region means that no shielding region projects alongside the respective gate region, interfering with the respective conductive channel. Consequently, the properties of conduction of the MOSFET device are not adversely affected by the presence of the shielding regions. In particular, the on-state resistance is not increased.

In addition, the fact that the manufacturing method is based upon a self-alignment of each gate region to the respective shielding region means that it is possible to reduce the distance between the gate regions, thus favoring miniaturization of the MOSFET device.

The problems of unbalancing of the electrical behavior of the device, identified with reference to the prior art, are moreover overcome.

Finally, it is clear that modifications and variations may be made to the device and method described and illustrated herein, without thereby departing from the sphere of protection of the present disclosure.

In particular, it is evident that the MOSFET device 31 of FIG. 2 may comprise any number (chosen according to the need) of gate regions by replicating an elementary cell constituted by the gate region and by the respective self-aligned shielding region. FIG. 4 illustrates an elementary cell of the MOSFET device 31, including a single gate region 42 a. The elementary cell of FIG. 4 comprises structural and functional elements corresponding to those already described with reference to FIG. 2, which are designated by corresponding reference numbers and are not described any further.

The various embodiments described above can be combined to provide further embodiments. These and other changes can be made to the embodiments in light of the above-detailed description. In general, in the following claims, the terms used should not be construed to limit the claims to the specific embodiments disclosed in the specification and the claims, but should be construed to include all possible embodiments along with the full scope of equivalents to which such claims are entitled. Accordingly, the claims are not limited by the disclosure. 

1. A method for manufacturing a MOSFET device, comprising: forming a structural body of a semiconductor material having a first type of conductivity; forming, at a first side of the structural layer, a body region of a second type of conductivity opposite to the first type; forming, at the first side and within the structural body, a source region, having the first type of conductivity; forming a trench gate in the structural layer starting from the first side and entirely through the source region and the body region; and forming a shielding region, having the second type of conductivity, in the structural body at an end of the trench gate that faces the second side of the structural body, the shielding region extending towards the second side of the structural body.
 2. The method of claim 1, wherein forming the trench gate comprises forming a gate electrode and forming a gate dielectric between the gate electrode and the structural body so as to insulate the gate electrode electrically from the structural body.
 3. The method of claim 1, wherein forming the shielding region comprises: forming a trench in the structural layer starting from the first side and through the body region and the source region; forming a spacer layer on side walls of the trench, leaving a portion of the structural body at a bottom of the trench exposed; and implanting dopant species having the second type of conductivity in the structural layer at the bottom of the trench, and wherein forming the gate region comprises forming the gate region within the trench so that the gate region and the shielding region are self-aligned along said axis.
 4. The method of claim 3, wherein implanting the dopant species comprises carrying out an implantation of said dopant species to form an implanted region in the structural layer underneath the trench and carrying out a process of thermal diffusion of said implanted region.
 5. The method of claim 1, wherein forming the structural layer comprises carrying out an epitaxial growth of a semiconductor layer having a concentration of dopant species of between 10¹⁴ atoms/cm³ and 10¹⁷ atoms/cm³, and forming the shielding region comprises forming the shielding region with a concentration of dopant species of between 10¹⁷ atoms/cm³ and 10²¹ atoms/cm³.
 6. The method of claim 1, further comprising: forming a source electrode extending in the structural body at the first side, in direct electrical contact with the source region and the body region; and forming a drain electrode electrically coupled to the second side of the structural body.
 7. The method according to claim 1, wherein said semiconductor material is silicon carbide.
 8. A method, comprising: forming a silicon carbide body on and in direct contact with a silicon carbide substrate, the silicon carbide substrate having a first type of conductivity, and having a first concentration of dopant species of the first type of conductivity that is greater than 10¹⁸ atoms/cm³, the silicon carbide body having the first type of conductivity and a second concentration of dopant species of the first type of conductivity that is less than the first concentration, the silicon carbide body having a first side and a second side opposite to one another; forming a body region, of a second type of conductivity opposite to the first type of conductivity, which extends in the silicon carbide body at the first side; forming a source region, having the first type of conductivity, which extends on the body region; forming a trench gate which extends in the structural body starting from the first side and entirely through the body region and the source region; and forming a shielding region having the second type of conductivity and positioned entirely within the structural body between an end of the trench gate and the second side of the silicon carbide body.
 9. The method of claim 8, wherein forming the trench gate includes: forming a gate electrode of conductive material and a gate dielectric of insulating material which extends between the gate electrode and the silicon carbide body and electrically insulating the gate electrode and the silicon carbide body from one another, the shielding region extending in contact with the gate dielectric.
 10. The method of claim 8, wherein forming the shielding region includes forming the shielding region aligned to the trench gate along a plane perpendicular to the first and second sides.
 11. The method of claim 8, wherein forming the shielding region includes forming the shielding region having, in a first plane parallel to the first and second sides, an extension equal to or smaller than an extension, in a second plane parallel to the first plane, of the trench gate.
 12. The method of claim 8, wherein the second concentration of dopant species of the first type of conductivity bestows on the silicon carbide body a resistivity of between 6.25 Ω·cm and 0.125 Ω·cm, and wherein the shielding region has a third concentration of dopant species of the second type of conductivity such as to bestow on the shielding region a resistivity of between 2.5·10⁻¹ Ω·cm and 6.5·10⁻³ Ω·cm.
 13. The method of claim 8, further comprising: forming a source electrode, which extends in the silicon carbide body on the first side, in direct electrical contact with the source region and the body region; and forming a drain electrode electrically coupled to the second side of the silicon carbide body.
 14. A method, comprising: forming a structural body on and in direct contact with a semiconductor substrate, the semiconductor substrate having a first type of conductivity, and having a first concentration of dopant species of the first type of conductivity that is greater than 10¹⁸ atoms/cm³, the structural body having the first conductivity type and a second concentration of dopant species of the first type of conductivity that is less than the first concentration; forming a body region on the structural body, the body region having a second conductivity type different than the first conductivity type; forming first and second source regions on the body region, the first and second source regions having the first type of conductivity; forming a first trench gate extending through the first source region, the body region, and at least partially into the structural body; forming a second trench gate extending through the second source region, the body region, and at least partially into the structural body; forming a contact trench extending at least partially into the body region, the contact trench disposed laterally between the first source region and the second source region; forming a first shielding region having the second conductivity type, the first shielding region disposed entirely within the structural body at an end of the first trench gate; and forming a second shielding region having the second conductivity type, the second shielding region disposed entirely within the structural body at an end of the second trench gate.
 15. The method of claim 14, wherein forming the first trench gate and forming the second trench gate includes forming each of the first and second trench gate having a respective gate electrode and a respective gate dielectric which extends between the gate electrode and the structural body and electrically insulates the gate electrode and the structural body from one another.
 16. The method of claim 14, wherein forming the first shielding region and forming the second shielding region includes forming the first and second shielding regions respectively aligned to with the first and second trench gates.
 17. The method claim 14, wherein forming the first shielding region includes forming the first shielding region having a thickness that is less than a thickness of the first trench gate, and forming the second shielding region includes forming the second shielding region having a thickness that is less than a thickness of the second trench gate.
 18. The method of claim 14, wherein the structural body has a resistivity between 6.25 Ω·cm and 0.125 Ω·cm, and each of the first and second shielding regions has a resistivity of between 2.5·10⁻¹ Ω·cm and 6.5·10⁻³ Ω·cm.
 19. The method of claim 14, further comprising: forming a source electrode on the body region, the source electrode contacting the first and second source regions and the body region; and forming a drain electrode electrically on the structural body, the structural body between the drain electrode and the body region.
 20. The method of claim 19, further comprising: forming a first dielectric region on the first source region and the first trench gate; and forming a second dielectric region on the second source region and the second trench gate, wherein the source electrode contacts the first and second dielectric regions and extends into the contact trench. 